83006 / 53006 mh im b8-7846 no.a0433-1/8 LB11988D overview the LB11988D is a 3-phase motor driver ic that is optimal for driving ventilation fan motors. features ? 3-phase full-wave current-linear drive system. ? current limiter circuit built in. ? output stage upper/lower over-saturation prevention circuit built in. ? forward/backward rotation direction setting circuit built in. ? fg amplifier built in. ? thermal shutdown circuit built in. absolute maximum ratings at ta = 25 c parameter symbol conditions ratings unit v cc max 24 v maximum supply voltage vs max 24 v maximum output current i o max 1.3 a allowable power dissipation pd max independent ic 2.0 w operating temperature range topr -30 to +75 c storage temperature range tstg -55 to +150 c allowable operating range at ta = 25 c parameter symbol conditions ratings unit vs 5 to 22 supply voltage v cc 7 to 22 v hall input amplitude vhall between hall inputs 30 to 80 mvo-p ordering number : ena0433 monolithic digital ic fan motor driver any and all sanyo semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo semiconductor representative nearest you before usingany sanyo semiconductor products described or contained herein in such applications. sanyo semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated val ues (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor products described or contained herein.
LB11988D no.a0433-2/8 electrical characteristics at ta = 25 c, v cc = 12v, vs = 12v ratings parameter symbol conditions min typ max unit v cc supply current i cc r l = 560 ? (y) 15 24 ma output v o sat1 i o = 500ma, rf = 0.5 ? , sink+source (with saturation prevention) 2.1 2.6 output saturation voltage v o sat2 i o = 1.0a, rf = 0 ? , sink+source (with saturation prevention) 2.6 3.5 v output leakage current i o leak 1.0 ma hall amplifier input offset voltage voff(hall) -6 +6 mv input bias current ib(hall) v in , w in 1 3 a common-mode input voltage vcm(hall) 3 v cc -3 v fr threshold voltage vfrth 4 8 v input bias current ib(fr) -5 a current limit lim pin current limit level ilim rf = 0.5 ? , hall input logic fixed (u, v, w = h, h, l) 1 a saturation saturation prevention circuit lower set voltage v o sat(det) r l = 560 ? (y),rf = 0.5 ? voltage between each out and rf 0.28 v fg amplifier output ?high? voltage vfgoh(sh) 11.8 output ?low? voltage vfgol(sh) 0.3 v hysteresis width vhys 23 mv tsd operating temperature ttsd design target value* 170 c * : t-tsd is not measured because it stands for design target. package dimensions unit : mm 3037c (1.95) 2.54 1.3 0.6 (r1.7) 11.2 (8.4) (4.0) 4.0 heat spreader 26.75 (20.0) 12.7 0.4 1 20 10 11 sanyo : dip20h(500mil)
LB11988D no.a0433-3/8 truth table and control function hall input source sink u v w fr v w h 1 w v h h l l u w h 2 w u h l l l u v h 3 v u h l h l w v h 4 v w l l h l w u h 5 u w l h h l v u h 6 u v l h l l n ote: ?h? in the fr column represents a voltage of 8v or more. ?l? represents a voltage of 4v or less. (at v cc =12v) n ote: ?h? under the hall input columns represents a state in which ?+? has a potential which is higher by 0.01v or more than that of the ?-? phase inputs. conversely ?l? represents a state in which ?+? has a potential which is lower by 0.01v or more than that of the ?-? phase inputs. n ote: since a 180 energized system is used as a drive system, other phases than the sink and source are not off. ilb01792 -30 -10 10 30 50 70 75 90 0 0.4 1.2 0.8 1.6 2.0 2.4 pd max - ta 1.2 independent ic ambient temperature, ta- c allowable power dissipation,pd max - w
LB11988D no.a0433-4/8 pin assignment 1 2 3 4 5 6 7 8 9 10 LB11988D 15 16 19 20 11 12 13 14 v cc 18 17 w in - w in + v in - v in + u in - u in + nc fc nc gnd fr fgs w out v out u out nc nc rf vs top view
LB11988D no.a0433-5/8 pin functions pin name pin no. input/output equivalent circuit pin functions v cc 1 power supply pin for supplying power to all circuits expect output section in ic; this voltage must be stabilized so as to eliminate ripple and noise. gnd 11 gnd for others than the output transistor. minimum potential of output transistor is at rf pin u in +, u in - 7, 6 u-phase hall device input pin; logic ?h? presents in+>in- v in +, v in - 5, 4 v-phase hall device input pin; logic ?h? presents in+>in- w in +, w in - 3, 2 w-phase hall device input pin; logic ?h? presents in+>in- u out v out w out 16 15 14 u-phase output pin. v-phase output pin. w-phase output pin. (built-in spark killer diode) rf 19 output current detection pin. connecting rf between this pin and gnd activates current limiting circuit. then the lower over-saturation prevention circuit is activated in accordance with this pin voltage. since the over-saturation prevention level is set with this voltage, the lower over-saturation prevention effect may deteriorate in the high current range if the rf value is reduced to an extremely low level. vs 20 power supply pin for supplying power to output section in ic. fr 12 forward/reverse switching pin. continued on next page. each (+) input 100 a 200 ? 200 ? each (-) input 7 5 3 6 4 2 200 ? each out vs v cc 150 a lower oversaturation prevention circuit block 30k ? rf 20 19 15 14 16 200 a 1/2v cc 200 ? fr v cc 12
LB11988D no.a0433-6/8 continued from preceding page. pin name pin no. input/output equivalent circuit pin functions fc 9 frequency characteristics compensation pin for over-saturation prevention circuit loop. fgs 13 fg amplifier output pin. resistive load provided internally. v cc fc 10k ? 9 fgout v cc 13 v cc 10k ? 5k ?
LB11988D no.a0433-7/8 block diagram fc u out v out w out differential distribution tsd drive distribution circuit & lower saturation prevention control upper saturation prevention control feedback amplifier limref schmidt amplifier bandgap 1.2v u in + u in - v in + v in - w in - w in + fr v cc vs u in - gnd fgs 5k ? rf current limitter 0.1 f 0.1 f 3 0.5 ? v cc u in + v cc 20 16 15 14 19 13 4 5 6 7 1 12 2 3 9 11 13.6k ? 30k ? fg amplifier forward/reverse switching hall input combination unit (linear matrix) combined output logarithmic compression unit logarithmic inverse transformation & differential distribution reference voltage
LB11988D no.a0433-8/8 ps specifications of any and all sanyo semiconductor pr oducts described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify s ymptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo semiconductor co., ltd. strives to supply high- quality high-reliability products. however, any and all semiconductor products fail with some probabi lity. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property . when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor produc ts (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording , or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo semiconductor co., ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor product that you intend to use. information (including circuit diagrams and circui t parameters) herein is for example only; it is not guaranteed for volume production. sanyo semicondu ctor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides i nformation as of may, 2006. specificati ons and information her ein are subject to change without notice.
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